Applications are invited from motivated and eligible candidates for the position of Junior Research Fellow (JRF) for the project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)” under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya.
Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to pradeeprathore@nitm.ac.in)
No. of position available: One (01)
Eligibility Qualifications:
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Position |
Qualifications |
Desirable qualifications |
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Junior Research Fellow (JRF)
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(a) M.Tech./M.E. in Electronics Engineering with specialization in VLSI, MEMS, Electronics and related areas with a minimum of 60% marks. The candidates must have cleared GATE exam.
(b) Age limit: Must not be over 28 years on last date of submission of application form. Relaxation for SC/ST & PH as per GOI norms. |
Candidates having experience of working with MEMS/Semiconductor simulation softwares and hands-on-experience in fabrication of MEMS/Semiconductor devices will be preferred for the JRF position in the project. |
Consolidated monthly compensation / Fellowship: Rs. 31,000.00 + HRA @ 8% per month. Note: HRA will be given only if accommodation in the Institute Hostel is not available.
Duration: Initial appointment is for one year, which is extendable up to the end of the project duration based on the performance of the candidate.
General terms and conditions:
