Applications are invited from motivated and eligible candidates for the position of Senior Research Fellow (SRF) for the project entitled “Design and Development of highly sensitive Non-Conventional Ring Channel Shaped MOSFET based current mirror integrated pressure sensors (DST/TDT/DDP-36/2021)” under Technology Development Transfer (TDT) Division and Device Development Programme (DDP) Scheme, Department of Science and Technology (DST), Government of India (File No.: DST/TDT/DDP/2021/129) in the Department of Electronics & Communication Engineering, National Institute of Technology (NIT) Meghalaya.
Principal investigator: Dr. PRADEEP KUMAR RATHORE (any queries should be communicated to email@example.com)
No. of position available: One (01)
|Senior Research Fellow (SRF)||(a) MTech/ME in Electronics Engineering with specialization in VLSI, MEMS, Electronics and related areas with a minimum of 60% marks. The candidates must have cleared GATE exam. (b) Two years of research experience in the relevant field. (c) Age limit: Must not be over 32 years on 13th August, 2021. Relaxation for SC/ST & PH as per GOI norms.||Candidates having experience of working with MEMS & Semiconductor simulation softwares, and hands-on-training/experience in fabrication of MEMS and Semiconductor devices will be preferred for the SRF position in the project.|
Consolidated monthly compensation / Fellowship: The amount of SRF fellowship will be as per the DST and NIT Meghalaya norms.
Duration: Initial appointment is for one year, which is extendable up to the end of the project duration based on the performance of the candidate.
General terms and conditions.